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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D123
BFG520W; BFG520W/X NPN 9 GHz wideband transistors
Product specification Supersedes data of August 1995 1998 Oct 02
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
FEATURES * High power gain * Low noise figure * High transition frequency * Gold metallization ensures excellent reliability. APPLICATIONS RF front end wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV) and repeater amplifiers in fibre-optic systems.
PINNING DESCRIPTION PIN BFG250W 1 2 3 4 collector base emitter emitter BFG250W/X collector emitter base emitter
handbook, halfpage
4
3
DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package.
1 2
MBK523
MARKING TYPE NUMBER BFG520W BFG520W/X QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot hFE Cre fT GUM |S21|2 F PARAMETER collector-base voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain insertion power gain noise figure Ts 85 C IC = 20 mA; VCE = 6 V IC = 0; VCB = 6 V; f = 1 MHz open emitter collector-emitter voltage RBE = 0 CONDITIONS CODE N3 N4
Top view
Fig.1 Simplified outline SOT343N.
MIN. - - - - 60 - -
TYP. MAX. UNIT - - - - 120 0.35 9 17 17 1.1 20 15 70 500 250 - - - - 1.6 pF GHz dB dB dB V V mA mW
IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 C
IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C - IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C 16 s = opt; IC = 5 mA; VCE = 6 V; f = 900 MHz -
1998 Oct 02
2
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCES VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER thermal resistance from junction to soldering point CONDITIONS Ts 85 C; note 1 VALUE 180 UNIT K/W PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature Ts 85 C; see Fig.2; note 1 RBE = 0 open collector CONDITIONS open emitter - - - - - -65 - MIN. MAX. 20 15 2.5 70 500 +150 175 V V V mA mW C C UNIT
handbook, halfpage
600
MBG248
P tot (mW) 400
200
0 0 50 100 150 T s ( C)
o
200
Fig.2 Power derating curve.
1998 Oct 02
3
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CES V(BR)EBO ICBO hFE Cre fT GUM PARAMETER collector-base breakdown voltage emitter-base breakdown voltage collector leakage current DC current gain feedback capacitance transition frequency maximum unilateral power gain; note 1 CONDITIONS IC =10 A; IE = 0 IE = 10 A; IC = 0 VCB = 6 V; IE = 0 IC = 20 mA; VCE = 6 V; see Fig.3 IC = 0; VCB = 6 V; f = 1 MHz; see Fig.4 IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 C; see Fig.5 MIN. 20 15 2.5 - 60 - - TYP. - - - - 120 0.35 9 17 11 17 1.1 1.6 1.85 17 26 275 -50 MAX. - - - 50 250 - - - - - 1.6 2.1 - - - - - pF GHz dB dB dB dB dB dB dBm dBm mV dB UNIT V V V nA
collector-emitter breakdown voltage IC = 10 A; RBE = 0
IC = 20 mA; VCE = 6 V; f = 900 MHz; - Tamb = 25 C IC = 20 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 C -
|S21|2 F
insertion power gain noise figure
IC = 20 mA; VCE = 6 V; f = 900 MHz; 16 Tamb = 25 C s = opt; IC = 5 mA; VCE = 6 V; f = 900 MHz s = opt; IC = 20 mA; VCE = 6 V; f = 900 MHz s = opt; IC = 5 mA; VCE = 6 V; f = 2 GHz - - -
PL1 ITO Vo d2 Notes
output power at 1 dB gain compression third order intercept point output voltage second order intermodulation distortion
IC = 20 mA; VCE = 6 V; f = 900 MHz; - RL = 50 ; Tamb = 25 C note 2 note 3 note 4 - - -
S 21 2 1. GUM is the maximum unilateral power gain, assuming S12 is zero. G UM = 10 log -------------------------------------------------------------- dB. ( 1 - S 11 2 ) ( 1 - S 22 2 ) 2. IC = 20 mA; VCE = 6 V; RL = 50 ; Tamb = 25 C; fp = 900 MHz; fq = 902 MHz; measured at 2fp - fq = 898 MHz and 2fq - fp = 904 MHz. 3. dim = -60 dB (DIN45004B); IC = 20 mA; VCE = 6 V; Vp = Vo; Vq = Vo -6 dB; Vr = Vo -6 dB; RL = 75 ; fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz; measured at fp + fq - fr = 793.25 MHz. 4. IC = 20 mA; VCE = 6 V; Vo = 75 mV; RL = 75 ; Tamb = 25 C; fp = 250 MHz; fq = 560 MHz; measured at fp + fq = 810 MHz.
1998 Oct 02
4
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
MLB807
handbook, halfpage
150
handbook, halfpage
0.6
MLB808
h FE
C re (pF) 0.4
100
50
0.2
0 10 1
0 1 10 I C (mA) 102 0 2.5 5 7.5 VCB (V) 10
VCE = 6 V.
IC = 0; f = 1 MHz.
Fig.3
DC current gain as a function of collector current; typical values.
Fig.4
Feedback capacitance as a function of collector-base voltage; typical values.
handbook, halfpage
12
MLB809
fT (GHz) 8
V CE = 6V 3V
4
0 1 10 I C (mA) 10 2
f = 1 GHz; Tamb = 25 C.
Fig.5
Transition frequency as a function of collector current; typical values.
1998 Oct 02
5
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
handbook, halfpage
30
MLB810
handbook, halfpage
30
MLB811
gain (dB) 20
gain (dB) 20
MSG
G max G UM
MSG 10 10
G max G UM
0
0
10
20
30 I C (mA)
40
0
0
10
20
30 I C (mA)
40
f = 900 MHz; VCE = 6 V.
f = 2 GHz; VCE = 6 V.
Fig.6
Gain as a function of collector current; typical values.
Fig.7
Gain as a function of collector current; typical values.
handbook, halfpage
50
MLB812
handbook, halfpage
50
MLB813
gain (dB) 40
G UM
gain (dB) 40
G UM MSG
MSG 30 30
20
20 G max 10
10
G max
0 10 10
2
0 10
3
f (MHz)
10
4
10
10
2
10
3
f (MHz)
10
4
IC = 5 mA; VCE = 6 V.
IC = 20 mA; VCE = 6 V.
Fig.8
Gain as a function of frequency; typical values.
Fig.9
Gain as a function of frequency; typical values.
1998 Oct 02
6
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
handbook, halfpage
30
MLB818
handbook, halfpage
30
MLB819
d im (dB) 40
d2 (dB) 40
50
50
60
60
70 0 10 20 30 I C (mA) 40
70 0 10 20 30 I C (mA) 40
Vo = 275 mV; fp + fq - fr = 793.25 MHz; VCE = 6 V; RL = 75 ; Tamb = 25 C.
Vo = 75 mV; fp + fq = 810 MHz; VCE = 6 V; RL = 75 Tamb = 25 C.
Fig.10 Intermodulation distortion as a function of collector current; typical values.
Fig.11 Second order intermodulation distortion as a function of collector current; typical values.
handbook, halfpage
4
MLB820
handbook, halfpage
20
MLB821
F (dB) 3 f = 2000 MHz
G ass (dB) 15
f = 900 MHz 1000 MHz
2000 MHz 2 1000 MHz 900 MHz 500 MHz 10
1
5
0 1 10 I C (mA)
10 2
0 1 10 I C (mA)
10 2
VCE = 6 V.
VCE = 6 V.
Fig.12 Minimum noise figure as a function of collector current; typical values.
Fig.13 Associated available gain as a function of collector current; typical values.
1998 Oct 02
7
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
MLB822
handbook, halfpage
4
handbook, halfpage
20
MLB823
F (dB) 3
G ass (dB) 15
I C = 5 mA
20 mA
2 IC = 20 mA 1 5 mA
10
5
0 10 2
10 3
f (MHz)
10 4
0 10 2
10 3
f (MHz)
10 4
VCE = 6 V.
VCE = 6 V.
Fig.14 Minimum noise figure as a function of frequency; typical values.
Fig.15 Associated available gain as a function of frequency; typical values.
1998 Oct 02
8
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
handbook, full pagewidth
unstable region 135 o
90 o 1.0 1 0.5 2 45 o 0.8 0.6 opt F min = 1.1 dB 0.4 0.2 2 5 0o 0
0.2
5
180 o stability circle
0
0.2
0.5
1 F = 1.5 dB F = 2 dB
0.2 F = 3 dB
5
0.5 135 o 1
2
45 o
MLB824
1.0
f = 900 MHz; VCE = 6 V; IC = 5 mA; Zo = 50 .
90 o
Fig.16 Common emitter noise figure circles; typical values.
90 o
handbook, full pagewidth
1.0 1 135 o 0.5 2 45 o 0.8 0.6 0.4 0.2
(2)
0.2
(3)
(4)
5
180 o
0
0.2
0.5
(1)
1
2
5
0o
0
(5)
(1) (2) (3) (4) (5)
opt; Fmin = 1.85 dB. F = 2 dB. F = 2.5 dB. F = 3 dB. ms; Gmax = 11.8 dB.
0.2
(6) (7)
5
0.5 135 o
(8)
2 1
45 o
MLB825
(6) G = 11 dB. (7) G = 10 dB. (8) G = 9 dB. f = 2 GHz; VCE = 6 V; IC = 5 mA; Zo = 50 .
1.0
90 o
Fig.17 Common emitter noise figure circles; typical values.
1998 Oct 02
9
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
90 o
handbook, full pagewidth
1.0 1 135 o 0.5 2 45 o 0.8 0.6 0.4 0.2 180 o 0 0.2 0.5 1 2 5 0o 0
0.2
3 GHz
5
40 MHz 0.2 5
0.5 135 o 1
2
45 o
MLB814
1.0
VCE = 6 V; IC = 20 mA; Zo = 50 .
90 o
Fig.18 Common emitter input reflection coefficient (S11); typical values.
90 o
handbook, full pagewidth
135 o
45 o
40 MHz 180 o 3 GHz 50 40 30 20 10 0o
135 o
45 o
90 o VCE = 6 V; IC = 20 mA.
MLB815
Fig.19 Common emitter forward transmission coefficient (S21); typical values.
1998 Oct 02
10
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
90 o
handbook, full pagewidth
135 o
3 GHz
45 o
180 o 0.25
40 MHz 0.20 0.15 0.10 0.05
0o
135 o
45 o
90 o VCE = 6 V; IC = 20 mA.
MLB816
Fig.20 Common emitter reverse transmission coefficient (S12); typical values.
90 o
handbook, full pagewidth
1.0 1 135 o 0.5 2 45 o 0.8 0.6 0.4 0.2 180 o 0 0.2 0.5 1 2 5 0o 0
0.2
5
40 MHz 0.2 3 GHz 5
0.5 135 o 1
2
45 o
MLB817
1.0
VCE = 6 V; IC = 20 mA; Zo = 50 .
90 o
Fig.21 Common emitter output reflection coefficient (S22); typical values.
1998 Oct 02
11
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
SPICE parameters for the BFG520W die SEQUENCE No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 22 23 24 25 26 27 28 29 30 31 32 33 34 35 (1)
(1) (1)
PARAMETER IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RB IRB RBM RE RC XTB EG XTI CJE VJE MJE TF XTF VTF ITF PTF CJC VJC MJC XCJC TR CJS
VALUE 1.016 220.1 1.000 48.06 510 283 2.035 100.7 0.988 1.692 2.352 24.48 1.022 10.00 1.000 10.00 775.3 2.210 0.000 1.110 3.000 1.245 600.0 0.258 8.616 6.788 1.414 110.3 45.01 447.6 189.2 0.070 0.130 543.7 0.000 - - V
UNIT fA
SEQUENCE No. 36 38 Note
(1)
PARAMETER VJS MJS FC
VALUE 750.0 0.000 0.780 - -
UNIT mV
37 (1)
mA fA - - - V mA aA - A m - eV - pF mV - ps - V mA deg fF mV - - ps F
1. These parameters have not been extracted, the default values are shown.
handbook, halfpage
C cb
L1 B
LB B' E' LE C'
L2 C
C be
Cce
MBC964
L3
E QLB = 50; QLE = 50; QLB,E(f) = QLB,E(f/fc) fc = scaling frequency = 1 GHz.
21 (1)
Fig.22 Package equivalent circuit SOT343N.
List of components (see Fig.22) DESIGNATION Cbe Ccb Cce L1 L2 L3 LB LE 70 50 115 0.34 0.10 0.25 0.40 0.40 VALUE fF fF fF nH nH nH nH nH UNIT
1998 Oct 02
12
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
PACKAGE OUTLINE Plastic surface mounted package; 4 leads SOT343N
D
B
E
A
X
y
HE e
vMA
4
3
Q
A A1 c
1
b1 e1 bp
2
wM B Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 b1 0.7 0.5 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 1.15 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT343N
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-05-21
1998 Oct 02
13
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
1998 Oct 02
14
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
NOTES
BFG520W; BFG520W/X
1998 Oct 02
15
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125104/00/03/pp16
Date of release: 1998 Oct 02
Document order number:
9397 750 04464

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